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TC59LM913AMB-50
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
512Mbits Network FCRAM1 (SSTL_2 Interface) - 4,194,304-WORDS x 8 BANKS x 16-BITS DESCRIPTION
Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM913AMB is Network FCRAMTM containing 536,870,912 memory cells. TC59LM913AMB is organized as 4,194,304-words x 8 banks x 16 bits. TC59LM913AMB feature a fully synchronous operation referenced to clock edge whereby all operations are synchronized at a clock input which enables high performance and simple user interface coexistence. TC59LM913AMB can operate fast core cycle compared with regular DDR SDRAM. TC59LM913AMB is suitable for Network, Server and other applications where large memory density and low power consumption are required. The Output Driver for Network FCRAMTM is capable of high quality fast data transfer under light loading condition.
FEATURES
PARAMETER tCK tRC tRAC Clock Cycle Time (min) Random Access Time (max) CL = 4 TC59LM913AMB-50 5.0 ns 25.0 ns 22.0 ns 240 mA 80 mA 20 mA
Random Read/Write Cycle Time (min)
IDD1S Operating Current (single bank) (max) lDD2P Power Down Current (max) lDD6 Self-Refresh Current (max)
*
*
* *
* * * * * * *
* * * * *
Fully Synchronous Operation * Double Data Rate (DDR) Data input/output are synchronized with both edges of DQS. * Differential Clock (CLK and CLK ) inputs CS , FN and all address input signals are sampled on the positive edge of CLK. Output data (DQs and DQS) is aligned to the crossings of CLK and CLK . Fast clock cycle time of 5 ns minimum Clock: 200 MHz maximum Data: 400 Mbps/pin maximum Fast cycle and Short Latency Eight independent banks operation When BA2 input assign to A14 input, TC59LM913AMB can function as 4bank device (Keep backward compatibility to 256Mb) Bidirectional Data Strobe Signal Distributed Auto-Refresh cycle in 3.9 s Self-Refresh Power Down Mode Variable Write Length Control Write Latency = CAS Latency-1 Programable CAS Latency and Burst Length CAS Latency = 4 Burst Length = 2, 4 Organization: TC59LM913AMB : 4,194,304 words x 8 banks x 16 bits Power Supply Voltage VDD: 2.5 V 0.15V VDDQ: 2.5 V 0.15 V 2.5 V CMOS I/O comply with SSTL_2 (half strength driver) Package: 60Ball BGA, 1mm x 1mm Ball pitch (P-BGA64-1317-1.00AZ) Keep backward compatibility for TC59LM814CFT(256Mbits) except package design. Notice : FCRAM is trademark of Fujitsu Limited, Japan.
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TC59LM913AMB-50
TC59LM913AMB PIN NAMES
PIN A0~A13 BA0~BA2 DQ0~DQ15
CS
NAME Address Input Bank Address Data Input/Output Chip Select Function Control Power Down Control Clock Input
PIN
NAME
UDQS/LDQS Write/Read Data Strobe VDD VSS VDDQ VSSQ VREF NC Power (+2.5 V) Ground Power (+2.5 V) (for I/O buffer) Ground (for I/O buffer) Reference Voltage Not Connected
FN
PD
CLK, CLK
4 bank operation can be performed using BA2 as A14.
PIN ASSIGNMENT (TOP VIEW)
ball pitch=1.0 x 1.0mm x 16
1 2 3 4 5 6
A B
Index
VSS DQ14 DQ13 DQ12
DQ15 VSSQ VDDQ DQ11 VSSQ VDDQ VSSQ
DQ0 VDDQ VSSQ DQ4 VDDQ VSSQ VDDQ LDQS VDD FN CS BA1
VDD DQ1 DQ2
C D E F G H J K L M N P R
NC NC
DQ3
DQ10 DQ9 DQ8 NC VREF
DQ5
DQ6 DQ7
NC
UDQS
VSS CLK
NC
BA2 NC
CLK A12
A13 NC BA0
PD A9
A11
A8
A7
A0
A10
A5
A6
A2
A1
VSS
A4
A3
VDD
: Depopulated ball
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TC59LM913AMB-50
BLOCK DIAGRAM
CLK
CLK PD
DLL CLOCK BUFFER
To each block
CS
FN
COMMAND DECODER
CONTROL SIGNAL GENERATOR
BANK #7 BANK #6 BANK #5 BANK #4 BANK #3 BANK #2 BANK #1 DATA CONTROL and LATCH CIRCUIT READ DATA BUFFER WRITE DATA BUFFER DQ BUFFER DQ0~DQ15 BANK #0 ROW DECODER
MODE REGISTER A0~A13 ADDRESS BUFFER UPPER ADDRESS LATCH LOWER ADDRESS LATCH
MEMORY CELL ARRAY
BA0~BA2
COLUMN DECODER
REFRESH COUNTER BURST COUNTER
WRITE ADDRESS LATCH/ ADDRESS COMPARATOR
DQS
Note: The TC59LM913AMB configuration is 8 Bank of 16384 x 256 x 16 of cell array with the DQ pins numbered DQ0~DQ15.
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ABSOLUTE MAXIMUM RATINGS
SYMBOL VDD VDDQ VIN VOUT VREF TCASE Tstg Tsolder PD IOUT PARAMETER Power Supply Voltage Power Supply Voltage (for I/O buffer) Input Voltage Output and I/O pin Voltage Input Reference Voltage Operating Temperature (case) Storage Temperature Soldering Temperature (10 s) Power Dissipation Short Circuit Output Current RATING -0.3~3.3 -0.3~VDD+ 0.3 -0.3~VDD+ 0.3 -0.3~VDDQ + 0.3 -0.3~VDD+ 0.3 0~85 -55~150 260 2 50 UNIT V V V V V C C C W mA NOTES
Caution: Conditions outside the limits listed under "ABSOLUTE MAXIMUM RATINGS" may cause permanent damage to the device. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to "ABSOLUTE MAXIMUM RATINGS" conditions for extended periods may affect device reliability.
RECOMMENDED DC, AC OPERATING CONDITIONS (Notes: 1)(TCASE = 0~85C)
SYMBOL VDD VDDQ VREF VIH (DC) VIL (DC) VICK (DC) VID (DC) VIH (AC) VIL (AC) VID (AC) VX (AC) VISO (AC) PARAMETER Power Supply Voltage Power Supply Voltage (for I/O buffer) Input Reference Voltage Input DC High Voltage Input DC Low Voltage Differential Clock DC Input Voltage Input Differential Voltage. CLK and CLK inputs (DC) Input AC High Voltage Input AC Low Voltage Input Differential Voltage. CLK and CLK inputs (AC) Differential AC Input Cross Point Voltage Differential Clock AC Middle Level MIN 2.35 2.35 VDDQ/2 x 96% VREF + 0.2 -0.1 -0.1 0.4 VREF + 0.35 -0.1 0.7 VDDQ/2 - 0.2 VDDQ/2 - 0.2 TYP. 2.5 VDD VDDQ/2 MAX 2.65 VDD VDDQ/2 x 104% VDDQ + 0.2 VREF - 0.2 VDDQ + 0.1 VDDQ + 0.2 VDDQ + 0.2 VREF - 0.35 VDDQ + 0.2 VDDQ/2 + 0.2 VDDQ/2 + 0.2 UNIT V V V V V V V V V V V V 2 5 5 10 7, 10 3, 6 4, 6 7, 10 8, 10 9, 10 NOTES
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NOTES: (1) (2) (3) (4) (5) (6) (7) (8) (9) (10) All voltages referenced to VSS, VSSQ. VREF is expected to track variations in VDDQ DC level of the transmitting device. Peak to peak AC noise on VREF may not exceed 2% VREF (DC). Overshoot limit: VIH (max) = VDDQ + 0.9 V with a pulse width 5 ns. Undershoot limit: VIL (min) = -0.9 V with a pulse width 5 ns. VIH (DC) and VIL (DC) are levels to maintain the current logic state. VIH (AC) and VIL (AC) are levels to change to the new logic state. VID is magnitude of the difference between CLK input level and CLK input level. The value of VX (AC) is expected to equal VDDQ/2 of the transmitting device. VISO means {VICK (CLK) + VICK ( CLK )} /2 Refer to the figure below.
CLK Vx
CLK
Vx VICK
Vx
Vx VICK
Vx VICK
VID (AC)
VICK VSS |VID (AC)|
0 V Differential VISO VISO (min) VSS VISO (max)
(11)
In the case of external termination, VTT (termination voltage) should be gone in the range of VREF (DC) 0.04 V.
CAPACITANCE (VDD = 2.5V, VDDQ = 2.5 V, f = 1 MHz, Ta = 25C)
SYMBOL CIN CINC CI/O CNC Input pin Capacitance Clock pin (CLK, CLK ) Capacitance DQ, DQS, UDQS, LDQS Capacitance NC pin Capacitance PARAMETER MIN 1.5 1.5 2.5 MAX 2.5 2.5 4.0 4.0 Delta 0.25 0.25 0.5 UNIT pF pF pF pF
Note: These parameters are periodically sampled and not 100% tested.
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RECOMMENDED DC OPERATING CONDITIONS
(VDD=2.5V 0.15V, VDDQ=2.5V 0.15V, TCASE = 0~85C)
SYMBOL Operating Current tCK = min, IRC = min ; Read/Write command cycling ; 0 V VIN VIL (AC) (max), VIH (AC) (min) VIN VDDQ ; 1 bank operation, Burst length = 4 ; Address change up to 2 times during minimum IRC. Standby Current IDD2N tCK = min, CS = VIH, PD = VIH ; 0 V VIN VIL (AC) (max), VIH (AC) (min) VIN VDDQ ; All banks: inactive state ; Other input signals are changed one time during 4 x tCK. Standby (power down) Current IDD2P tCK = min, CS = VIH, PD = VIL (Power Down) ; 0 V VIN VDDQ ; All banks: inactive state Write Operation Current (4 Banks) 8 Bank Interleaved continuous burst write operation ; tCK = min, IRC = min ; Burst Length = 4, CAS Latency = 4 ; 0 V VIN VIL (AC) (max), VIH (AC) (min) VIN VDDQ ; DQ and DQS inputs change twice per clock cycle Read Operation Current (4 Banks) 8 Bank Interleaved contious burst read operation ; tCK = min, IRC = min, IOUT = 0mA ; Burst Length = 4, CAS Latency = 4 ; 0 V VIN VIL (AC) (max), VIH (AC) (min) VIN VDDQ ; Address inputs change once per clock cycle. Read data change twice per clock cycle. Burst Auto Refresh Current Refresh command at every IREFC interval ; tCK = min, IREFC = min ; CAS Latency = 4 ; 0 V VIN VIL (AC) (max), VIH (AC) (min) VIN VDDQ ; Address inputs change up to 2 times during minimum IREFC. DQ and DQS inputs change twice per clock cycle. Self-Refresh Current IDD6 Self-Refresh mode ; PD = 0.2 V, 0 V VIN VDDQ 20 2 80 1, 2 100 1, 2 PARAMETER MAX UNIT NOTES
IDD1S
240
1, 2
IDD4W
350 mA
1, 2
IDD4R
350
1, 2
IDD5B
250
1, 2, 3
Notes: 1. These parameters depend on the cycle rate and these values are measured at a cycle rate with the minimum values of tCK, tRC and IRC. 2. These parameters defines the current between VDD and VSS. 3. IDD5B is specified under burst refresh condition. Actual system should use distributed refresh that meet tREFI specification.
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RECOMMENDED DC OPERATING CONDITIONS (continued)
(VDD=2.5V 0.15V, VDDQ=2.5V 0.15V, TCASE = 0~85C)
SYMBOL ILI ILO IREF IOH (DC) IOL (DC) IOH (DC) IOL (DC) IOH (DC) IOL (DC) IOH (DC) IOL (DC) PARAMETER Input Leakage Current ( 0 V VIN VDDQ, all other pins not under test = 0 V) Output Leakage Current (Output disabled, 0 V VOUT VDDQ) VREF Current Output Source DC Current VOH = VDDQ - 0.4V MIN -5 -5 -5 -10 10 -11 11 -8 8 -7 7 MAX 5 5 5 mA 1 UNIT A A A NOTES
Normal Output Driver Output Sink DC Current VOL = 0.4V
Output Source DC Current VOH = VDDQ - 0.4V Strong Output Driver Output Sink DC Current VOL = 0.4V Output Source DC Current VOH = VDDQ - 0.4V
Weaker Output Driver Output Sink DC Current VOL = 0.4V
Output Source DC Current VOH = VDDQ - 0.4V Weakest Output Driver Output Sink DC Current VOL = 0.4V
Notes: 1. Refer to output driver characteristics for the detail. Output Driver Strength is selected by Extended Mode Register.
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TC59LM913AMB-50
AC CHARACTERISTICS AND OPERATING CONDITIONS (Notes: 1, 2)
(VDD = 2.5V 0.15V, VDDQ = 2.5V 0.15V, TCASE = 0~85C)
SYMBOL tRC tCK tRAC tCH tCL tCKQS tQSQ tAC tOH tQSPRE tHP tQSP tQSQV tQHS tDQSS tDSPRE tDSPRES tDSPREH tDSP tDSS tDSPST tDSPSTH tDSSK tDS tDH tIS tIH Random Cycle Time Clock Cycle Time ( CL = 4 ) Random Access Time Clock High Time Clock Low Time QS Access Time from CLK Data Output Skew from DQS Data Access Time from CLK Data Output Hold Time from CLK DQS (read) Preamble Pulse Width CLK half period (minimum of Actual tCH, tCL) DQS (read) Pulse Width Data Output Valid Time from DQS DQ Hold Skew factor DQS (write) Low to High Setup Time DQS (write) Preamble Pulse Width DQS First Input Setup Time DQS First Low Input Hold Time DQS High or Low Input Pulse Width DQS Input Falling Edge to Clock Setup Time DQS (write) Postamble Pulse Width DQS (write) Postamble Hold Time UDQS - LDQS Skew (x16) Data Input Setup Time from DQS Data Input Hold Time from DQS Command/Address Input Setup Time Command/Address Input Hold Time PARAMETER MIN 25 5.0 0.45 x tCK 0.45 x tCK -0.65 -0.65 -0.65 0.9 x tCK - 0.2 min(tCH, tCL) tHP- tQHS tHP- tQHS 0.75 x tCK 0.4 x tCK 0 0.25 x tCK 0.45 x tCK 1.3 0.45 x tCK 1.3 -0. 5 x tCK 0.5 0.5 0.9 0.9 MAX 8.5 22.0 0.65 0.4 0.65 0.65 1.1 x tCK + 0.2 0.55 1.25 x tCK 0.55 x tCK 0. 5 x tCK 4 4 3 3 ns 3 4 3 3 4 3, 4 4 3, 4 UNIT NOTES 3 3 3 3 3 3, 8 4 3, 8 3, 8 3, 8 3 4, 8 4, 8
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AC CHARACTERISTICS AND OPERATING CONDITIONS (Notes: 1, 2) (continued)
SYMBOL tLZ tHZ tQSLZ tQSHZ tQPDH tPDEX tT tFPDL tREFI tPAUSE IRC IRCD IRAS IRBD PARAMETER Data-out Low Impedance Time from CLK Data-out High Impedance Time from CLK DQS-out Low Impedance Time from CLK DQS-out High Impedance Time from CLK Last output to PD High Hold Time Power Down Exit Time Input Transition Time
PD Low Input Window for Self-Refresh Entry
MIN -0.65 -0.65 -0.65 0 0.9 0.1 -0.5 x tCK 0.4 200 5 1 4 2 BL = 2 BL = 4 2 3 1
MAX 0.65 0.65 1 5 3.9 1 1 1
UNIT
NOTES 3,6,8 3,7,8 3,6,8 3,7,8
ns 3
3 s 5
Auto-Refresh Average Interval Pause Time after Power-up Random Read/Write Cycle Time (applicable to same bank) RDA/WRA to LAL Command Input Delay (applicable to same bank) LAL to RDA/WRA Command Input Delay (applicable to same bank) Random Bank Access Delay (applicable to other bank) LAL following RDA to WRA Delay (applicable to other bank) LAL following WRA to RDA Delay (applicable to other bank) Mode Register Set Cycle Time
IRWD
IWRD IRSC IPD IPDA IPDV IREFC ICKD ILOCK
cycle
CL = 3
PD Low to Inactive State of Input Buffer PD High to Active State of Input Buffer
5 18 18 16 200
Power down mode valid from REF command Auto-Refresh Cycle Time REF Command to Clock Input Disable at Self-Refresh Entry DLL Lock-on Time (applicable to RDA command)
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TC59LM913AMB-50
AC TEST CONDITIONS
SYMBOL VIH (min) VIL (max) VREF VTT VSWING Vr VID (AC) SLEW VOTR PARAMETER Input High Voltage (minimum) Input Low Voltage (maximum) Input Reference Voltage Termination Voltage Input Signal Peak to Peak Swing Differential Clock Input Reference Level Input Differential Voltage Input Signal Minimum Slew Rate Output Timing Measurement Reference Voltage VALUE VREF + 0.35 VREF - 0.35 VDDQ/2 VREF 1.0 VX (AC) 1.5 1.0 VDDQ/2 UNIT V V V V V V V V/ns V 9 NOTES
VDDQ VIH min (AC) VSWING VREF VIL max (AC) Measurement point VSS T T AC Test Load 25 Output VTT
SLEW = (VIH min (AC) - VIL max (AC))/T
NOTES: (1) Transition times are measured between VIH min (DC) and VIL max (DC). Transition (rise and fall) of input signals have a fixed slope. (2) If the result of nominal calculation with regard to tCK contains more than one decimal place, the result is rounded up to the nearest decimal place. (i.e., tDQSS = 0.75 x tCK, tCK = 5 ns, 0.75 x 5 ns = 3.75 ns is rounded up to 3.8 ns.) These parameters are measured from the differential clock (CLK and CLK ) AC cross point. These parameters are measured from signal transition point of DS crossing VREF level. The tREFI (max) applies to equally distributed refresh method. The tREFI (min) applies to both burst refresh method and distributed refresh method. In such case, the average interval of eight consecutive Auto-Refresh commands has to be more than 400 ns always. In other words, the number of Auto-Refresh cycles which can be performed within 3.2 s (8 x 400 ns) is to 8 times in the maximum. Low Impedance State is specified at VDDQ/2 0.2 V from steady state. High Impedance State is specified where output buffer is no longer driven. These parameters depend on the clock jitter. These parameters are measured at stable clock. Output timing is measured by using Normal driver strength.
(3) (4) (5)
(6) (7) (8) (9)
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POWER UP SEQUENCE
(1) (2) (3) (4) (5) (6) (7) (8) (9) As for PD , being maintained by the low state ( 0.2 V) is desirable before a power-supply injection. Apply VDD before or at the same time as VDDQ. Apply VDDQ before or at the same time as VREF. Start clock (CLK, CLK ) and maintain stable condition for 200 s (min). After stable power and clock, apply DESL and take PD =H. Issue EMRS to enable DLL and to define driver strength. (Note: 1) Issue MRS for set CAS latency (CL), Burst Type (BT), and Burst Length (BL). (Note: 1) Issue two or more Auto-Refresh commands (Note: 1). Ready for normal operation after 200 clocks from Extended Mode Register programming.
NOTES: (1) Sequence 6, 7 and 8 can be issued in random order. (2) L = Logic Low, H = Logic High
2.5V(TYP) VDD 2.5V(TYP) VDDQ 1.25V(TYP) VREF
CLK CLK 200us(min) PD lPDA 200clock cycle(min) tPDEX lRSC lRSC lREFC lREFC
Command
DESL RDA MRS
DESL
RDA MRS
DESL WRA REF
DESL
WRA REF
DESL
op-code Address EMRS
op-code
MRS
DQ Hi-Z DQS
EMRS
MRS
Auto Refresh cycle
Normal Operation
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TC59LM913AMB-50
TIMING DIAGRAMS
Input Timing
Command and Address
tCK CLK
CLK
tCK tCH tCL
tIS
CS
tIH 1st
tIS 2nd
tIH
tIS FN tIS A0~A13 BA0~BA2 1st
tIH
tIS 2nd
tIH
tIH UA, BA
tIS LA
tIH
Data
DQS tDS tDH DQ (input) Refer to the Command Truth Table. tDS tDH
Timing of the CLK, CLK
tCH
CLK
tCL VIH VIH (AC) VIL (AC) VIL tCK tT tT
CLK
CLK
VIH VID (AC) VIL
CLK VX VX VX
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TC59LM913AMB-50
Read Timing (Burst Length = 4)
tCH CLK
CLK
tCL
tCK
tIS tIH Input (control & addresses)
LAL (after RDA) DESL tCKQS tCKQS tQSPRE tQSP tQSP tQSHZ tCKQS
tQSLZ
CAS latency = 4
DQS (output)
Hi-Z Preamble tLZ tQSQV tQSQ tQSQ tQSQV Postamble tQSQ tHZ Q3 tAC tOH
DQ (output)
Hi-Z tAC
Q0
Q1 tAC
Q2
Note: DQ0 to DQ15 are aligned with DQS or LDQS/UDQS. The correspondence of LDQS, UDQS to DQ. (TC59LM913AMB) LDQS UDQS DQ0DQ7 DQ8DQ15
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Write Timing (Burst Length = 4)
tCH CLK
CLK
tCL
tCK
tIS tIH LAL (after WRA) Input (control & addresses) DESL tDSS
CAS latency = 4
tDSPRES tDSP tDSPREH
tDSS
tDSPSTH
tDSP tDSP tDSPST
DQS (input) Preamble tDSPRE tDS tDH DQ (input) tDQSS D0 D1 tDQSS tDS tDS tDH D2 D3 tDH Postamble
Note: DQ0 to DQ15 are sampled at both edges of DQS or LDQS / UDQS. The correspondence of LDQS, UDQS to DQ. (TC59LM913AMB) LDQS UDQS DQ0DQ7 DQ8DQ15
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TC59LM913AMB-50
tREFI, tPAUSE, Ixxxx Timing
CLK
CLK
tREFI, tPAUSE, IXXXX tIS tIH tIS tIH
Input (control & addresses) Command Note: "IXXXX" means "IRC", "IRCD", "IRAS", etc. Command
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Write Timing (x16 device) (Burst Length =4)
CLK
CLK
Input (control & addresses)
WRA
LAL
DESL
CAS latency = 4
tDSSK tDSSK tDSSK tDSSK
LDQS Preamble tDS tDH DQ0~DQ7 D0 tDS tDH D1 tDS tDH D2 D3 tDS tDH Postamble
UDQS Preamble tDS tDH DQ8~DQ15 D0 tDS tDH D1 tDS tDH D2 D3 tDS tDH Postamble
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FUNCTION TRUTH TABLE (Notes: 1, 2, 3)
Command Truth Table (Notes: 4)
* The First Command
SYMBOL DESL RDA WRA FUNCTION Device Deselect Read with Auto-close Write with Auto-close
CS
FN x H L
BA2~BA0 x BA BA
A13~A9 x UA UA
A8 x UA UA
A7 x UA UA
A6~A0 x UA UA
H L L
* The Second Command (The next clock of RDA or WRA command)
SYMBOL LAL REF MRS FUNCTION Lower Address Latch (x16) Auto-Refresh Mode Register Set
CS
FN x x x
BA1 ~BA0 x x V
BA2 V x L
A13 V x L
A12 ~A11 V x L
A10 ~A9 x x L
A8 x x L
A7 LA x V
A6~A0 LA x V
H L L
Notes: 1. L = Logic Low, H = Logic High, x = either L or H, V = Valid (specified value), BA = Bank Address, UA = Upper Address, LA = Lower Address 2. All commands are assumed to issue at a valid state. 3. All inputs for command (excluding SELFX and PDEX) are latched on the crossing point of differential clock input where CLK goes to High. 4. Operation mode is decided by the combination of 1st command and 2nd command. Refer to "STATE DIAGRAM" and the command table below.
Read Command Table
COMMAND (SYMBOL) RDA (1st) LAL (2nd)
CS
FN H x
BA2~BA0 BA x
A13~A9 UA x
A8 UA LA
A7 UA LA
A6~A0 UA LA
NOTES
L H
5
Note 5 : For x16 device, A8 is "X" (either L or H).
Write Command Table * TC59LM913AMB
COMMAND(SYMBOL) WRA (1st) LAL (2nd)
CS
FN L x
BA1~ BA0 BA x
BA2 UA LVW0
A13 UA LVW1
A12 UA UVW0
A11 UA UVW1
A10~ A9 UA x
A8 UA x
A7 UA LA
A6~A0 UA LA
L H
Notes: 6. BA2, A13 ~ A11 are used for Variable Write Length (VW) control at Write Operation.
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FUNCTION TRUTH TABLE (continued)
VW Truth Table
Burst Length Function Write All Words BL=2 Write First One Word Reserved Write All Words BL=4 Write First Two Words Write First One Word Note 7 : LVW0 and LVW1 control DQ0~DQ7. L H H H H L H VW0 L VW1 x x L L
UVW0 and UVW1 control DQ8~DQ15.
Mode Register Set Command Table
COMMAND (SYMBOL) RDA (1st) MRS (2nd)
CS
FN H x
BA2~BA0 x V
A13~A9 x V
A8 x V
A7 x V
A6~A0 x V
NOTES
L L
8
Notes: 8. Refer to "MODE REGISTER TABLE".
Auto-Refresh Command Table
FUNCTION COMMAND (SYMBOL) WRA (1st) REF (2nd) CURRENT STATE Standby Active
PD
n-1 H H
CS
FN
BA2~BA0 x x
A13~A9 x x
A8 x x
A7 x x
A6~A0 NOTES x x
n H H L L L x
Active Auto-Refresh
Self-Refresh Command Table
FUNCTION COMMAND (SYMBOL) WRA (1st) REF (2nd) SELFX CURRENT STATE Standby Active Self-Refresh Self-Refresh
PD
n-1 H H L L
CS
FN
BA2~BA0 x x x x
A13~A9 x x x x
A8 x x x x
A7 x x x x
A6~A0 NOTES x x x x 11 9, 10
n H L L H L L x H L x x x
Active Self-Refresh Entry Self-Refresh Continue Self-Refresh Exit
Power Down Table
FUNCTION COMMAND (SYMBOL) PDEN PDEX CURRENT STATE Standby Power Down Power Down
PD
n-1 H L L
CS
FN x x x
BA2~BA0 x x x
A13~A9 x x x
A8 x x x
A7 x x x
A6~A0 NOTES x x x 11
n L L H H x H 10
Power Down Entry Power Down Continue Power Down Exit
Notes: 9. PD has to be brought to Low within tFPDL from REF command. 10. PD should be brought to Low after DQ's state turned high impedance. 11. When PD is brought to High from Low, this function is executed asynchronously.
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FUNCTION TRUTH TABLE (continued)
CURRENT STATE
PD n-1 n CS
FN x H L x x x x x x x x x x x x x x H L x x x x H L x x x x H L x x x x H L x x x x x x x x x x x
ADDRESS x BA, UA BA, UA x x x LA Op-code x x x LA x x x x x BA, UA BA, UA x x x x BA, UA BA, UA x x x x BA, UA BA, UA x x x x BA, UA BA, UA x x x x x x x x x x x
COMMAND DESL RDA WRA PDEN LAL MRS/EMRS PDEN MRS/EMRS LAL REF PDEN REF (self) DESL RDA WRA PDEN DESL RDA WRA PDEN DESL RDA WRA PDEN DESL RDA WRA PDEN PDEX SELFX
ACTION NOP Row activate for Read Row activate for Write Power Down Entry Illegal Refer to Power Down State Begin Read Access to Mode Register Illegal Illegal Invalid Begin Write Auto-Refresh Illegal Self-Refresh Entry Invalid Continue Burst Read to End Illegal Illegal Illegal Illegal Invalid Data Write & Continue Burst Write to End Illegal Illegal Illegal Illegal Invalid NOP Idle after IREFC Illegal Illegal Self-Refresh Entry Illegal Refer to Self-Refreshing State NOP Idle after IRSC Illegal Illegal Illegal Illegal Invalid Invalid Maintain Power Down Mode Exit Power Down Mode Idle after tPDEX Illegal Invalid Maintain Self-Refresh Exit Self-Refresh Idle after IREFC Illegal
NOTES
Idle
H H H H H L H H H H L H H H H L H H H H H L H H H H H L H H H H H L H H H H H L H L
H H H L L x H H L L x H H L L x H H H L L x H H H L L x H H H L L x H H H L L x x L H H x L H H
H L L H L x H L H L x H L H L x H L L H L x H L L H L x H L L H L x H L L H L x x x H L x x H L
12
Row Active for Read
Row Active for Write
Read
13 13
Write
13 13
Auto-Refreshing
14
Mode Register Accessing
Power Down
L L H L L L
Self-Refreshing
Notes: 12. Illegal if any bank is not idle. 13. Illegal to bank in specified states; Function may be legal in the bank inidicated by Bank Address (BA). 14. Illegal if tFPDL is not satisfied.
Rev 1.1 2005-08-19 19/46
TC59LM913AMB-50
MODE REGISTER TABLE
Regular Mode Register (Notes: 1)
ADDRESS Register BA1 0
*1
BA0 0
*1
BA2, A13~A8 0
A7
*3
A6~A4 CL
A3 BT
A2~A0 BL
TE
A7 0 1
TEST MODE (TE) Regular (default) Test Mode Entry
A3 0 1
BURST TYPE (BT) Sequential Interleave
A6 0 0 0 1 1 1 1
A5 0 1 1 0 0 1 1
A4 x 0 1 0 1 0 1
CAS LATENCY (CL)
A2 0 0 0 0
A1 0 0 1 1 x
A0 0 1 0 1 x
BURST LENGTH (BL) Reserved 2 4 Reserved
*2 *2
Reserved Reserved Reserved 4 Reserved Reserved Reserved
*2 *2 *2
*2 *2 *2
1
Extended Mode Register (Notes: 4)
ADDRESS Register BA1 0
*4
BA0 1
*4
BA2, A13~A12 0
A11 0
A10~A7 0
A6 DIC
A5~A2 0
A1 DIC
A0
*5
DS
A6 0 0 1 1
A1 0 1 0 1
OUTPUT DRIVE IMPEDANCE CONTROL (DIC) Normal Output Driver Strong Output Driver Weaker Output Driver Weakest Output Driver
A0 0 1 Notes: 1. Regular Mode Register is chosen using the combination of BA0 = 0 and BA1 = 0. 2. "Reserved" places in Regular Mode Register should not be set. 3. A7 in Regular Mode Register must be set to "0" (low state). Because Test Mode is specific mode for supplier. 4. Extended Mode Register is chosen using the combination of BA0 = 1 and BA1 = 0. 5. A0 in Extended Mode Register must be set to "0" to enable DLL for normal operation.
DLL SWITCH (DS) DLL Enable DLL Disable
Rev 1.1 2005-08-19 20/46
TC59LM913AMB-50
STATE DIAGRAM
SELFREFRESH SELFX ( PD = H)
PD = L
POWER DOWN PDEX ( PD = H) PDEN ( PD = L) STANDBY (IDLE) MODE REGISTER WRA RDA MRS
PD = H
AUTOREFRESH
REF
ACTIVE (RESTORE)
ACTIVE
LAL
LAL
WRITE (BUFFER)
READ
Command input Automatic return The second command at Active state must be issued 1 clock after RDA or WRA command input.
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TC59LM913AMB-50
TIMING DIAGRAMS
SINGLE BANK READ TIMING (CL = 4)
0 CLK
CLK
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
IRC = 5 cycles Command RDA LAL DESL IRAS = 4 cycles RDA LAL
IRC = 5 cycles DESL IRAS = 4 cycles RDA LAL
IRC = 5 cycles DESL IRAS = 4 cycles UA RDA
IRCD=1 cycle Address UA LA
IRCD=1 UA LA
IRCD=1 cycle UA LA
Bank Add. BL = 2 DQS (output)
#0
#0
#0
#0
Hi-Z CL = 4 CL = 4 Q0 Q1 Q0 Q1 CL = 4 Q0
DQ (output) BL = 4 DQS (output)
Hi-Z
Hi-Z CL = 4 CL = 4 Q0 Q1 Q2 Q3 Q0 Q1 Q2 Q3 CL = 4 Q0
DQ (output)
Hi-Z
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TC59LM913AMB-50
SINGLE BANK WRITE TIMING (CL = 4)
0 CLK
CLK
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
IRC = 5 cycles Command WRA LAL DESL WRA LAL
IRC = 5 cycles DESL WRA LAL
IRC = 5 cycles DESL WRA
Address
UA
LA
UA
LA
UA
LA
UA
Bank Add. BL = 2 DQS (input)
#0
#0
#0
#0
WL = 3 DQ (input) BL = 4 DQS (input) WL = 3 DQ (input) D0 D1 D2 D3 D0 D1
WL = 3 D0 D1
WL = 3 D0 D1
WL = 3 D0 D1 D2 D3
WL = 3 D0 D1 D2 D3
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TC59LM913AMB-50
SINGLE BANK READ-WRITE TIMING (CL = 4)
0 CLK
CLK
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
IRC = 5 cycles Command RDA LAL DESL WRA LAL
IRC = 5 cycles DESL RDA LAL
IRC = 5 cycles DESL WRA
Address
UA
LA
UA
LA
UA
LA
UA
Bank Add. BL = 2 DQS
#0
#0
#0
#0
Hi-Z
CL = 4 DQ BL = 4 DQS Hi-Z Hi-Z Q0 Q1
WL = 3 D0 D1
CL = 4 Q0
CL = 4 DQ Hi-Z Q0 Q1 Q2 Q3
WL = 3 D0 D1 D2 D3
CL = 4 Q0
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TC59LM913AMB-50
MULTIPLE BANK READ TIMING (CL = 4)
0 CLK
CLK
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
IRBD = 2 cycles Command RDA LAL RDA LAL
IRBD = 2 cycles IRBD = 2 cyclesIRBD = 2 cycles IRBD = 2 cycles DESL RDA LAL RDA LAL RDA LAL RDA LAL RDA LAL RDA
Address
UA
LA
UA
LA
UA
LA
UA
LA
UA
LA
UA
LA
UA
LA
UA
Bank Add.
Bank "a"
Bank "b" IRC (Bank"a") = 5 cycles
Bank "a"
Bank "b"
Bank "c"
Bank "d"
Bank "a"
Bank "b"
BL = 2 DQS (output) Hi-Z
IRC (Bank"b") = 5 cycles
CL = 4 CL = 4 DQ (output) BL = 4 DQS (output) Hi-Z CL = 4 CL = 4 DQ (output) Hi-Z
Qa0Qa1Qa2Qa3Qb0Qb1Qb2Qb3 Qa0Qa1Qa2Qa3Qb0Qb1Qb2Qb3Qc0Qc1Qc2
Hi-Z
Qa0Qa1
Qb0Qb1
Qa0Qa1
Qb0Qb1
Qc0Qc1
Note: lRC to the same bank must be satisfied.
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TC59LM913AMB-50
MULTIPLE BANK WRITE TIMING (CL = 4)
0 CLK
CLK
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
IRBD = 2 cycles Command WRA LAL WRA LAL
IRBD = 2 cycles IRBD = 2 cycles IRBD = 2 cycles IRBD = 2 cycles DESL WRA LAL WRA LAL WRA LAL WRA LAL WRA LAL WRA
Address
UA
LA
UA
LA
UA
LA
UA
LA
UA
LA
UA
LA
UA
LA
UA
Bank Add.
Bank "a"
Bank "b" IRC (Bank"a") = 5 cycles
Bank "a"
Bank "b"
Bank "c"
Bank "d"
Bank "a"
Bank "b"
IRC (Bank"b") = 5 cycles BL = 2 DQS (input) WL = 3 WL = 3 DQ (input) BL = 4 DQS (input) WL = 3 WL = 3 DQ (input)
Da0 Da1 Da2Da3Db0Db1Db2Db3 Da0Da1Da2Da3Db0Db1 Db2 Db3 Dc0 Dc1 Dc2 Dc3 Dd0Dd1 Da0 Da1 Db0Db1 Da0Da1 Db0Db1 Dc0 Dc1 Dd0Dd1
Note: lRC to the same bank must be satisfied.
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TC59LM913AMB-50
MULTIPLE BANK READ-WRITE TIMING (BL = 2)
0 CLK
CLK
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
IRBD = 2 cycles Command WRA LAL RDA LAL DESL WRA LAL RDA LAL DESL WRA LAL RDA LAL DESL WRA
IWRD = 1 cycle Address UA Bank "a" LA UA Bank "b"
IRWD = 2 cycles IWRD = 1 cycle LA UA Bank "c" IRC (Bank"a") IRC (Bank"b") LA UA Bank "d"
IRWD = 2 cycles LA UA Bank "a" LA UA Bank "b" LA UA Bank "c"
Bank Add.
CL = 4 DQS
Hi-Z CL = 4 WL = 3 Hi-Z
DQ
Da0 Da1
Qb0 Qb1
Dc0 Dc1
Qd0 Qd1
Da0 Da1
Note: lRC to the same bank must be satisfied.
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TC59LM913AMB-50
MULTIPLE BANK READ-WRITE TIMING (BL = 4)
0 CLK
CLK
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
IRBD = 2 cycles WRA LAL RDA LAL DESL IRWD = 3 cycles LA UA WRA LAL RDA LAL DESL IRWD = 3 cycles LA UA WRA LAL RDA LAL
Command
IWRD = 1 cycle Address UA LA UA
IWRD = 1 cycle LA UA
IWRD = 1 cycle LA UA LA
Bank Add.
Bank "a"
Bank "b"
Bank "c" IRC (Bank"a")
Bank "d"
Bank "a"
Bank "b"
IRC (Bank"b") CL = 4 DQS Hi-Z CL = 4 WL = 3 DQ Hi-Z
Da0 Da1 Da2 Da3 Qb0 Qb1 Qb2 Qb3 Dc0 Dc1 Dc2 Dc3 Qd0 Qd1 Qd2 Qd3
Note: lRC to the same bank must be satisfied.
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TC59LM913AMB-50
WRITE with VARIAVLE WRITE LENGTH (VW) CONTROL (CL = 4)
0 CLK
CLK
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
BL = 2, SEQUENTIAL MODE Command WRA LAL DESL WRA LAL DESL
Address
UA
LA=#3 VW=All
UA
LA=#1 VW=1
VW0 = Low VW1 = don't care
VW0 = High VW1 = don't care
Bank Add.
Bank "a"
Bank "a"
DQS (input) DQ (input) Lower Address BL = 4, SEQUENTIAL MODE Command WRA LAL DESL WRA LAL DESL WRA LAL DESL
D0 D1
D0
#3 #2
#1 (#0) Last one data is masked.
Address
UA
LA=#3 VW=All
UA
LA=#1 VW=1
UA
LA=#2 VW=2
VW0 = High VW1 = Low
VW0 = High VW1 = High
VW0 = Low VW1 = High
Bank Add.
Bank "a"
Bank "a"
Bank "a"
DQS (input) DQ (input) Lower Address
D0 D1 D2 D3
D0
D0 D1
#3 #0 #1 #2
#1(#2)(#3)(#0) Last three data are masked.
#2 #3 (#0)(#1) Last two data are masked.
Note: DQS input must be continued till end of burst count even if some of laster data is masked.
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TC59LM913AMB-50
POWER DOWN TIMING (CL = 4, BL = 4)
Read cycle to Power Down Mode
0 CLK
CLK
1
2
3
4
5
6
7
8
9
10
n-2
n-1
n
n+1
n+2
IPDA Command RDA LAL DESL DESL
RDA or WRA
Address
UA
LA tIS tIH IPD = 1 cycle
UA
PD
tQPDH lRC(min) , tREFI(max) DQS (output) Hi-Z
tPDEX
CL = 4 DQ (output) Hi-Z
Q0 Q1 Q2 Q3
Hi-Z
Power Down Entry
Power Down Exit
Note: PD must be kept "High" level until end of Burst data output. PD should be brought to "High" within tREFI(max.) to maintain the data written into cell. In Power Down Mode, PD "Low" and a stable clock signal must be maintained. When PD is brought to "High", a valid executable command may be applied lPDA cycles later.
Rev 1.1 2005-08-19 30/46
TC59LM913AMB-50
POWER DOWN TIMING (CL = 4, BL = 4)
Write cycle to Power Down Mode
0 CLK
CLK
1
2
3
4
5
6
7
8
9
10
n-2
n-1
n
n+1
n+2
IPDA Command WRA LAL DESL DESL
RDA or WRA
Address
UA
LA tIS tIH IPD = 1 cycle
UA
PD
WL = 3
2 clock cycles
lRC(min) , tREFI(max)
tPDEX
DQS (input) WL = 3 DQ (input)
D0 D1 D2 D3
Note: PD must be kept "High" level until WL+2 clock cycles from LAL command. PD should be brought to "High" within tREFI(max.) to maintain the data written into cell. In Power Down Mode, PD "Low" and a stable clock signal must be maintained. When PD is brought to "High", a valid executable command may be applied lPDA cycles later.
Rev 1.1 2005-08-19 31/46
TC59LM913AMB-50
MODE REGISTER SET TIMING (CL = 4, BL = 2)
From Read operation to Mode Register Set operation.
0 CLK
CLK
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
IRSC Command RDA LAL DESL RDA MRS DESL
RDA or WRA
LAL
A13~A0
UA
LA
Valid (opcode)
UA
LA
BA0~BA2
BA CL + BL/2
BA0="0" BA1="0" BA2="0"
BA
DQS (output) DQ (output)
Hi-Z
Q0 Q1
Note: Minimum delay from LAL following RDA to RDA of MRS operation is CL+BL/2.
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TC59LM913AMB-50
MODE REGISTER SET TIMING (CL = 4, BL = 4)
From Write operation to Mode Register Set operation.
0 CLK
CLK
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
IRSC Command WRA LAL DESL RDA MRS DESL
RDA or WRA
LAL
A13~A0
UA
LA
Valid (opcode)
UA
LA
BA0~BA2
BA WL+BL/2
BA0="0" BA1="0" BA2="0"
BA
DQS (input)
DQ (input)
D0 D1 D2 D3
Note: Minimum delay from LAL following WRA to RDA of MRS operation is WL+BL/2.
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TC59LM913AMB-50
EXTENDED MODE REGISTER SET TIMING (CL = 4, BL = 2)
From Read operation to Extended Mode Register Set operation.
0 CLK
CLK
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
IRSC Command RDA LAL DESL RDA MRS DESL
RDA or WRA
LAL
A13~A0
UA
LA
Valid (opcode)
UA
LA
BA0~BA2
BA CL + BL/2
BA0="1" BA1="0" BA2="0"
BA
DQS (output) DQ (output)
Hi-Z
Q0 Q1
Note:
Minimum delay from LAL following RDA to RDA of EMRS operation is CL+BL/2. DLL switch in Extended Mode Register must be set to enable mode for normal operation. DLL lock-on time is needed after initial EMRS operation. See Power Up Sequence.
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TC59LM913AMB-50
EXTENDED MODE REGISTER SET TIMING (CL = 4, BL = 4)
From Write operation to Extended Mode Register Set operation.
0 CLK
CLK
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
IRSC Command WRA LAL DESL RDA MRS DESL
RDA or WRA
LAL
A13~A0
UA
LA
Valid (opcode)
UA
LA
BA0~BA2
BA WL+BL/2
BA0="1" BA1="0" BA2="0"
BA
DQS (input) DQ (input) Note:
D0 D1 D2 D3
DLL switch in Extended Mode Register must be set to enable mode for normal operation. DLL lock-on time is needed after initial EMRS operation. See Power Up Sequence. Minimum delay from LAL following WRA to RDA of EMRS operation is WL+BL/2.
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TC59LM913AMB-50
AUTO-REFRESH TIMING (CL = 4, BL = 4)
0 CLK
CLK
1
2
3
4
5
6
7
n-1
n
n+1
n+2
IRC = 5 cycles Command RDA LAL DESL WRA REF
IREFC = 18 cycles DESL RDA or WRA LAL or MRS or REF
Bank, Address
Bank, UA
LA IRAS = 4 cycles IRCD=1 cycle Hi-Z CL = 4
IRCD=1 cycle DQS (output) Hi-Z
DQ (output)
Hi-Z
Q0 Q1 Q2 Q3
Hi-Z
Note: In case of CL = 4, IREFC must be meet 18 clock cycles. When the Auto-Refresh operation is performed, the synthetic average interval of Auto-Refresh command specified by tREFI must be satisfied. tREFI is average interval time in 8 Refresh cycles that is sampled randomly. t1 CLK t2 t3 t7 t8
WRA REF
WRA REF
WRA REF
WRA REF
WRA REF
8 Refresh cycle tREFI = Total time of 8 Refresh cycle 8 = t1 + t2 + t3 + t4 + t5 + t6 + t7 + t8 8
tREFI is specified to avoid partly concentrated current of Refresh operation that is activated larger area than Read / Write operation.
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TC59LM913AMB-50
SELF-REFRESH ENTRY TIMING
0 CLK
CLK
1
2
3
4
5
m-1
m
m+1
IRCD = 1 cycle WRA REF
IREFC DESL Auto Refresh Self Refresh Entry
Command
tFPDL (min) tFPDL (max)
PD
tQPDH DQS (output) DQ (output) Qx Notes: 1. 2.
Hi-Z Hi-Z is don't care.
IPDV *2 ICKD
3. 4.
PD must be brought to "Low" within the timing between tFPDL(min) and tFPDL(max) to Self Refresh mode. When PD is brought to "Low" after lPDV, TC59LM913AMB perform Auto Refresh and enter Power down mode. In case of PD fall between tFPDL(max) and lPDV, TC59LM913AMB will either entry Self-Refresh mode or Power down mode after Auto-Refresh operation. It can't be specified which mode TC59LM913AMB operates. It is desirable that clock input is continued at least lCKD from REF command even though PD is brought to "Low" for Self-Refresh Entry. In case of Self-Refresh entry after Write Operation, the delay time from the LAL command following WRA to the REF command is Write latency (WL)+3 clock cycles minimum.
SELF-REFRESH EXIT TIMING
0 CLK
CLK
*2
1
2
m-1
m
m+1
m+2
n-1
n
n+1
p-1
p
IREFC Command DESL
*3
IREFC WRA
*4
Command (1st)*5 Command (2nd)*5 RDA IRCD = 1 cycle
*6
REF
*4
DESL
LAL
*6
IRCD = 1 cycle
PD
tPDEX ILOCK DQS (output) DQ (output) Hi-Z
Hi-Z Self-Refresh Exit Notes: 1. is don't care.
2. Clock should be stable prior to PD = "High" if clock input is suspended in Self-Refresh mode. 3. DESL command must be asserted during IREFC after PD is brought to "High". 4. It is desirable that one Auto-Refresh command is issued just after Self-Refresh Exit before any other operation. 5. Any command (except Read command) can be issued after IREFC. 6. Read command (RDA + LAL) can be issued after ILOCK.
Rev 1.1 2005-08-19 37/46
TC59LM913AMB-50
FUNCTIONAL DESCRIPTION Network FCRAM
TM
is competent to
FCRAMTM is an acronym of Fast Cycle Random Access Memory. The Network FCRAMTM perform fast random core access, low latency and high-speed data transfer.
PIN FUNCTIONS
CLOCK INPUTS: CLK & CLK
The CLK and CLK inputs are used as the reference for synchronous operation. CLK is master clock input. The CS , FN and all address input signals are sampled on the crossing of the positive edge of CLK and the negative edge of CLK . The DQS and DQ output are aligned to the crossing point of CLK and CLK . The timing reference point for the differential clock is when the CLK and CLK signals cross during a transition.
POWER DOWN: PD
The PD input controls the entry to the Power Down or Self-Refresh modes. The PD input does not have a Clock Suspend function like a CKE input of a standard SDRAMs, therefore it is illegal to bring PD pin into low state if any Read or Write operation is being performed.
CHIP SELECT & FUNCTION CONTROL: CS & FN
The CS and FN inputs are a control signal for forming the operation commands on FCRAMTM. Each operation mode is decided by the combination of the two consecutive operation commands using the CS and FN inputs.
BANK ADDRESSES: BA0~BA2
The BA0 to BA2 inputs are latched at the time of assertion of the RDA or WRA command and are selected the bank to be used for the operation. BA0 and BA1 also define which mode register is loaded during the Mode Register Set command (MRS or EMRS).
BA0 Bank #0 Bank #1 Bank #2 Bank #3 Bank #4 Bank #5 Bank #6 Bank #7 0 1 0 1 0 1 0 1 BA1 0 0 1 1 0 0 1 1 BA2 0 0 0 0 1 1 1 1
Also, when BA2 input assign to A14 input, TC59LM913AMB can function as 4bank devices and can keep backward compatibility to 256Mb(4bank) Network FCRAM.
ADDRESS INPUTS: A0~A13
Address inputs are used to access the arbitrary address of the memory cell array within each bank. The Upper Addresses with Bank addresses are latched at the RDA or WRA command and the Lower Addresses are latched at the LAL command. The A0 to A13 inputs are also used for setting the data in the Regular or Extended Mode Register set cycle.
I/O Organization 8 bank operation 4 bank operation 16 bits 16 bits UPPER ADDRESS A0~A13 A0~A13, BA2(A14) LOWER ADDRESS A0~A7 A0~A7
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TC59LM913AMB-50
DATA INPUT/OUTPUT: DQ0~DQ7 or DQ15
The input data of DQ0 to DQ15 are taken in synchronizing with the both edges of DQS input signal. The output data of DQ0 to DQ15 are outputted synchronizing with the both edges of DQS signal.
DATA STROBE: DQS, LDQS / UDQS
The DQS is bi-directional signal. Both edges of DQS are used as the reference of data input or output. In write operation, the DQS used as an input signal is utilized for a latch of write data. In read operation, the DQS is an output signal provides the read data strobe.
POWER SUPPLY: VDD, VDDQ, VSS, VSSQ
VDD and VSS are power supply pins for memory core and peripheral circuits. VDDQ and VSSQ are power supply pins for the output buffer.
REFERENCE VOLTAGE: VREF
VREF is reference voltage for all input signals.
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TC59LM913AMB-50
COMMAND FUNCTIONS and OPERATIONS
TC59LM913AMB are introduced the two consecutive command input method. Therefore, except for Power Down mode, each operation mode decided by the combination of the first command and the second command from stand-by states of the bank to be accessed.
Read Operation (1st command + 2nd command = RDA + LAL)
Issuing the RDA command with Bank Addresses and Upper Addresses to the idle bank puts the bank designated by Bank Address in a read mode. When the LAL command with Lower Addresses is issued at the next clock of the RDA command, the data is read out sequentially synchronizing with the both edges of DQS output signal (Burst Read Operation). The initial valid read data appears after CAS latency from the issuing of the LAL command. The valid data is outputted for a burst length. The CAS latency, the burst length of read data and the burst type must be set in the Mode Register beforehand. The read operated bank goes back automatically to the idle state after lRC.
Write Operation (1st command + 2nd command = WRA + LAL)
Issuing the WRA command with Bank Addresses and Upper Addresses to the idle bank puts the bank designated by Bank Address in a write mode. When the LAL command with Lower Addresses is issued at the next clock of the WRA command, the input data is latched sequentially synchronizing with the both edges of DQS input signal (Burst Write Operation). The data and DQS inputs have to be asserted in keeping with clock input after CAS latency-1 from the issuing of the LAL command. The DQS has to be provided for a burst length. The CAS latency and the burst type must be set in the Mode Register beforehand. The write operated bank goes back automatically to the idle state after lRC. Write Burst Length is controlled by VW0 and VW1 inputs with LAL command. See VW truth table.
Auto-Refresh Operation (1st command + 2nd command = WRA + REF)
TC59LM913AMB are required to refresh like a standard SDRAM. The Auto-Refresh operation is begun with the REF command following to the WRA command. The Auto-Refresh mode can be effective only when all banks are in the idle state. In a point to notice, the write mode started with the WRA command is canceled by the REF command having gone into the next clock of the WRA command instead of the LAL command. The minimum period between the Auto-Refresh command and the next command is specified by lREFC. However, about a synthetic average interval of Auto-Refresh command, it must be careful. In case of equally distributed refresh, Auto-Refresh command has to be issued within once for every 3.9 s by the maximum. In case of burst refresh or random distributed refresh, the average interval of eight consecutive Auto-Refresh commands has to be more than 400 ns always. In other words, the number of Auto-Refresh cycles that can be performed within 3.2 s (8 x 400 ns) is to 8 times in the maximum.
Self-Refresh Operation (1st command + 2nd command = WRA + REF with PD = "L")
In case of Self-Refresh operation, refresh operation can be performed automatically by using an internal timer. When all banks are in the idle state and all outputs are in Hi-Z states, the TC59LM913AMB become Self-Refresh mode by issuing the Self-Refresh command. PD has to be brought to "Low" within tFPDL from the REF command following to the WRA command for a Self-Refresh mode entry. In order to satisfy the refresh period, the Self-Refresh entry command should be asserted within 3.9 s after the latest Auto-Refresh command. Once the device enters Self-Refresh mode, the DESL command must be continued for lREFC period. In addition, it is desirable that clock input is kept in lCKD period. The device is in Self-Refresh mode as long as PD held "Low". During Self-Refresh mode, all input and output buffers are disabled except for PD , therefore the power dissipation lowers. Regarding a Self-Refresh mode exit, PD has to be changed over from "Low" to "High" along with the DESL command, and the DESL command has to be continuously issued in the number of clocks specified by lREFC. The Self-Refresh exit function is asynchronous operation. It is required that one Auto-Refresh command is issued to avoid the violation of the refresh period just after lREFC from Self-Refresh exit.
Power Down Mode ( PD = "L")
When all banks are in the idle state and DQ outputs are in Hi-Z states, the TC59LM913AMB become Power Down Mode by asserting PD is "Low". When the device enters the Power Down Mode, all input and output buffers are disabled after specified time except for PD . Therefore, the power dissipation lowers. To exit the Power Down Mode, PD has to be brought to "High" and the DESL command has to be issued for two clocks cycle after PD goes high. The Power Down exit function is asynchronous operation.
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Mode Register Set (MRS) and Extended Mode Register Set (EMRS) (1st command + 2nd command = RDA + MRS)
When all banks are in the idle state, issuing the MRS command following to the RDA command can program the Mode Register. In a point to notice, the read mode started with the RDA command is canceled by the MRS command having gone into the next clock of the RDA command instead of the LAL command. The data to be set in the Mode Register is transferred using A0 to A14, BA0 to BA1 address inputs. The TC59LM913AMB have two mode registers. These are Regular and Extended Mode Register. The Regular or Extended Mode Register is chosen by BA0 and BA1 in the MRS command. The Regular Mode Register designates the operation mode for a read or write cycle. The Regular Mode Register has four function fields. The four fields are as follows: (R-1) Burst Length field to set the length of burst data (R-2) Burst Type field to designate the lower address access sequence in a burst cycle (R-3) CAS Latency field to set the access time in clock cycle (R-4) Test Mode field to use for supplier only. The Extended Mode Register has three function fields. The three fields are as follows: (E-1) DLL Switch field to choose either DLL enable or DLL disable (E-2) Output Driver Impedance Control field. (E-3) DQS enable field. Once those fields in the Mode Register are set up, the register contents are maintained until the Mode Register is set up again by another MRS command or power supply is lost. The initial value of the Regular or Extended Mode Register after power-up is undefined, therefore the Mode Register Set command must be issued before proper operation. * Regular Mode Register/Extended Mode Register change bits (BA0, BA1). These bits are used to choose either Regular MRS or Extended MRS
BA1 0 0 1 BA0 0 1 x Mode Register Set Regular MRS Extended MRS Reserved
Regular Mode Register Fields
(R-1) Burst Length field (A2 to A0) This field specifies the data length for column access using the A2 to A0 pins and sets the Burst Length to be 2 or 4 words.
A2 0 0 0 0 1 A1 0 0 1 1 x A0 0 1 0 1 x BURST LENGTH Reserved 2 words 4 words Reserved Reserved
(R-2) Burst Type field (A3) The Burst Type can be chosen Interleave mode or Sequential mode. When the A3 bit is "0", Sequential mode is selected. When the A3 bit is "1", Interleave mode is selected. Both burst types support burst length of 2 and 4 words.
A3 0 1 BURST TYPE Sequential Interleave
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* Addressing sequence of Sequential mode (A3) A column access is started from the inputted lower address and is performed by incrementing the lower address input to the device.
CAS Latency = 4
CLK
CLK
Command DQS DQ
RDA
LAL
Data Data Data Data 0 1 2 3
Addressing sequence for Sequential mode
DATA Data 0 Data 1 Data 2 Data 3 ACCESS ADDRESS n n+1 n+2 n+3 BURST LENGTH 2 words (address bits is LA0) not carried from LA0~LA1 4 words (address bits is LA1, LA0) not carried from LA1~LA2
*
Addressing sequence of Interleave mode A column access is started from the inputted lower address and is performed by interleaving the address bits in the sequence shown as the following.
Addressing sequence for Interleave mode
DATA Data 0 Data 1 Data 2 Data 3 ACCESS ADDRESS A8 A7 A6 A5 A4 A3 A2 A1 A0 A8 A7 A6 A5 A4 A3 A2 A1 A8 A7 A6 A5 A4 A3 A2 A8 A7 A6 A5 A4 A3 A2
A1 A1
A0
BURST LENGTH 2 words 4 words
A0
A0
(R-3) CAS Latency field (A6 to A4) This field specifies the number of clock cycles from the assertion of the LAL command following the RDA command to the first data read. The minimum values of CAS Latency depends on the frequency of CLK. In a write mode, the place of clock that should input write data is CAS Latency cycles - 1.
A6 0 0 0 0 1 1 1 1 A5 0 0 1 1 0 0 1 1 A4 0 1 0 1 0 1 0 1
CAS LATENCY
Reserved Reserved Reserved Reserved 4 Reserved Reserved Reserved
(R-4) Test Mode field (A7) This bit is used to enter Test Mode for supplier only and must be set to "0" for normal operation. (R-5) Reserved field in the Regular Mode Register * Reserved bits (A8 to A13, BA2) These bits are reserved for future operations. They must be set to "0" for normal operation.
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Extended Mode Register fields
(E-1) DLL Switch field (A0) This bit is used to enable DLL. When the A0 bit is set "0", DLL is enabled. This bit must be set to "0" for normal operation. (E-2) Output Driver Impedance Control field (A1, A6) This field is used to choose Output Driver Strength. Four types of Driver Strength are supported.
A6 0 0 1 1 A1 0 1 0 1 OUTPUT DRIVER IMPEDANCE CONTROL Normal Output Driver Strong Output Driver Weaker Output Driver Weakest Output Driver
(E-3)
DQS enable (A10) DQS is not supported. This bit must be always set "0".
(E-4) Reserved field (A2 to A5, A7 to A9, A11 to A13, BA2) These bits are reserved for future operations and must be set to "0" for normal operation.
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PACKAGE DIMENSIONS
P-BGA64-1317-1.00AZ
0.2 S B 0.15 1.20MAX
0.2 S
16.5 0 13.086 -0.15
0.2 S A
0 10.975 -0.15
12.7
Note: In order to support a package, four outer balls located on F and K row are required to assembly to board. These four ball is not connected to any electrical level.
Weight: 0.23g (typ.)
S 0.4 0.05 0.15MIN 0.1 S
0.5 0.05 B 1.25 0.08
S AB
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
INDEX 123 456 1.85 1.5 1.5
3.85 A 1.0 3.85
1.0 2.0
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REVISION HISTORY
- Rev.0.9 ( Feb.27th '2004 ) - Rev0.91 ( Mar.16th `2004 ) * Corrected TYPO(page50). Pin name is changed from "Q" to "R". - Rev0.92 ( Apr.21th `2004 ) * IDD6 spec changed from 20mA to 40mA (page 1, 7). * IDD5B spec changed as below (page 7). "-50": 250mA 420mA, "-55": 240mA 400mA, "-60": 230mA 380mA * Corrected TYPO (page 7). CAS Latency condition is changed from CL5 to CL4. - Rev0.93 ( Jun. 9th `2004 ) * Auto-Refresh Average Interval (tREFI) changed from 7.8s to 3.9s (page 1, 10, 46). * IDD6 spec changed from 40mA to 20mA (page 1, 7). * IDD5B spec changed as below (page 7). "-50" : 420mA 250mA, "-55": 400mA 240mA, "-60": 380mA 230mA - Rev1.0 ( Aug. 20th `2004 ) * "-60" version dropped. * Package name (P-BGA64-1317-1.00AZ) added (page 1). * Some Note in the page 8 moved to page 7 (page 7, 8). * Note 2 changed as below (page 7). Before: These parameters depend on the output loading. The specified values are obtained with the output open. After: These parameters define the current between VDD and VSS. * Corrected TYPO (page 14, 15, 17). * Package weight (0.23g) added (page 50). - Rev1.1 ( Aug. 19th `2005 ) * CAS Latency=3 feature dropped. * 8 I/O feature dropped. * "-55" speed version dropped.
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
030619EBA
* The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The products described in this document are subject to the foreign exchange and foreign trade laws. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.
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